There are 2 terminals of diode first is positive called anode and second is negative called cathode. Construction O Heavy Doping Effects: i. It was the quantum mechanical effect which is known as tunneling. To manufacture tunnel diode devices, the standard fabrication processes can be sued, enabling he devices to be made in an economic fashion. Tunnel diode is a type of sc diode which is capable of very fast and in microwave frequency range. Esaki The diode was invented in the year 1957 by Leo Esaki.Later in the year 1973 he obtained the Nobel Prize for his work on tunneling effect. (Ip=Peak value of forward current and Iv= Valley current). The P portion of the diode operates as anode and the N part is denoted as a cathode. De diode ontleent zijn naam aan Leo Esaki , en wordt onder andere gebruikt in oscillatoren , LC-kringen en hoogfrequente toepassingen met microgolven . construction 3. In its simplest form, electricity moves into an anode through a semiconductor and out through a cathode.Due to the construction of the diode itself, electricity is unable to move back through the structure, which makes an average diode … (Ip=Peak value of forward current and IV= Valley current). in the construction of tunnel diode because Ip/Iv is maximum in case of Gallium arsenide. These diodes work on the principle of Tunneling. O Highly doped PN- junction. This ratio is very small for silicon and is of the order of 3. Quantitative Study of the Tunnel Effect in p-n Junctions 433 4. Thirdly, it produces a negative resistance section on the V/I characteristic of the diode. NEET Physics Tunnel Diode Multiple Choice Questions make you feel confident in answering the question in the exam & increases your scores to high. A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling.It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. The tunnel diode is similar to a standard p-n junction in many respects except that the doping levels are very high. In this post we will learn the basic characteristics and working of tunnel diodes, and also a simple application circuit using this device. The semiconductors used in Gunn diodes are Gallium Arsenide (GaAs), Gallium Nitride (GaN), Cadmium Telluride (CdTe), Cadmium Sulphide (CdS), Indium Phosphide (InP), Indium Arsenide (InAs), Indium Antimonide (InSb) and Zinc Selenide (ZnSe). Tunnel Diode Construction. is a platform for academics to share research papers. Most widely used material for the construction of the Gunn diode is Gallium arsenide (GaAs), and Indium Phosphide (InP). Esaki diodes was named after Leo Esaki, who in 1973 received the Nobel Prize in Physics for discovering the electron tunneling effect used in these diodes. BASIC WORKING ,CONSTRUCTION , ADVANTAGES AND APPLICATION OF TUNNEL DIODE NOTES AVAILABLE @ Tunnel Diode. Silicon is not used in the fabrication of tunnel diodes due to low (Ip,I v)value. Silicon is not used in the construction of tunnel diode becuase Ip/Iv is maximum in case of Gallium arsenide. These all have small forbidden energy gaps and high ion motilities. Construction of Gunn Diode: The Gunn diode is fabricated from a single N-type semiconductor layer. Tunneling means a direct flow of the electrons from n-side to p-type. TUNNEL DIODE TEST CIRCUITS PHOTOGRAPH OF PEAK CURRENT TEST SET UP FIGURE 7.9 7.3 Tunnel Diode Junction Capacitance Test Set In previous chapters the tunnel diode equivalent circuit has been analyzed and it can be shown that the apparent capacity looking into the device terminals is: strays - L s g d (when w <